| 摘要 |
PROBLEM TO BE SOLVED: To eliminate signal transmission delay inside a chip, to improve the destruction resistance of an element, and to improve the reliability. SOLUTION: The semiconductor device 10 comprises a semiconductor substrate 21 of the first conductivity type, a first diffusion layer 22 of the first conductivity type, a second diffusion layer of the second conductivity type formed inside the first diffusion layer 22, and a third diffusion layer 27 of the first conductivity type selectively formed on the surface of the second diffusion layer 23. A trench 24 is formed inside the second diffusion layer 23, a conductive film is embedded on the inner side via an insulating film 25 and a gate electrode 14 is formed. Furthermore, the semiconductor device 10 includes a first main electrode, connected to the third diffusion layer 2, a second main electrode connected to the semiconductor substrate 21 and a bus line 12 connected to both ends of the gate electrode. The resistance value of the gate electrode 14 is reduced, as going toward the center part 16, starting from both the ends 15 of the gate electrode. COPYRIGHT: (C)2009,JPO&INPIT
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