| 摘要 |
Provided is an image sensor. The image sensor comprises an interlayer dielectric, lines, and a crystalline semiconductor layer including photodiodes and a device isolation region. The interlayer dielectric can be formed on a first substrate comprising a readout circuitry. The lines pass through the interlayer dielectric to connect with the readout circuitry, and each line is formed according to unit pixel. The crystalline semiconductor layer can be bonded on the interlayer dielectric including the lines. The photodiodes, formed inside the crystalline semiconductor layer, are electrically connected with the lines. The device isolation region comprises conductive impurities and is formed inside the crystalline semiconductor layer so that the photodiodes can be separated according to unit pixels.
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