| 摘要 |
A method of forming devices including forming a first region and a second region in a semiconductor substrate is provided. The method further includes forming a semiconductive material over the first region, wherein the semiconductive material has a different electrical property than the first semiconductor substrate, forming a first dielectric material over the first region, depositing a second dielectric material over the first dielectric material and over the second region, wherein the second dielectric material is different than the first dielectric material, and depositing a gate electrode material over the high dielectric constant material. In one embodiment, the semiconductive material is silicon germanium and the semiconductor substrate is silicon.
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