| 发明名称 |
METHOD FOR PRODUCING METAL OXIDE SEMICONDUCTOR THIN FILM AND THIN FILM TRANSISTOR USING THE SAME |
| 摘要 |
<p>Disclosed is a metal oxide semiconductor having high carrier mobility and stability. Also disclosed are a method for producing a metal oxide semiconductor with improved production efficiency, and a thin film transistor (TFT) which stably operates by using a metal oxide semiconductor. Specifically, a metal oxide semiconductor thin film is formed on a substrate by producing a plasma discharge of a mixed gas of a raw material containing a precursor of the metal oxide semiconductor and a carrier gas near atmospheric pressure.</p> |
| 申请公布号 |
WO2009031423(A1) |
申请公布日期 |
2009.03.12 |
| 申请号 |
WO2008JP65097 |
申请日期 |
2008.08.25 |
| 申请人 |
KONICA MINOLTA HOLDINGS, INC.;HIRAI, KATSURA;KITA, HIROSHI;FUKUDA, KAZUHIRO |
发明人 |
HIRAI, KATSURA;KITA, HIROSHI;FUKUDA, KAZUHIRO |
| 分类号 |
H01L21/31;C01G15/00;C23C16/40;H01L21/336;H01L29/786 |
主分类号 |
H01L21/31 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
