发明名称 Verfahren zum Herstellen eines festen Leistungsmoduls und damit hergestelltes Transistormodul
摘要 The method involves producing an integrated punched grid. The punched grid is assembled with semiconductor components, possible passive assembly parts and bonding corresponding connections. The recesses at predetermined positions remain in the envelop in the power module during enveloping. A subsequent cutting out of bars of integral punched grid takes place through the mounting die inserted in the recesses, by producing electrically insulated islands of punched grid material of the integral punched grid.
申请公布号 DE102007020618(B8) 申请公布日期 2009.03.12
申请号 DE20071020618 申请日期 2007.04.30
申请人 DANFOSS SILICON POWER GMBH 发明人 ULRICH, HOLGER;SENYILDIZ, TEOMAN;EISELE, RONALD
分类号 H01L21/58;H01L21/56;H01L23/36;H01L23/495;H01L25/07;H05K7/02 主分类号 H01L21/58
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