发明名称 SEMICONDUCTOR OXIDE FILM, ITS MANUFACTURING METHOD AND HYDROGEN GENERATION APPARATUS USING SEMICONDUCTOR OXIDE FILM
摘要 <P>PROBLEM TO BE SOLVED: To provide a new film which can be used as a photocatalyst film with improved photoelectric conversion efficiency more than a conventional film, its manufacturing method, and a hydrogen generation apparatus using such a film and suitable for generating hydrogen from an aqueous solution. <P>SOLUTION: A semiconductor oxide film comprises a laminated structure of a first photocatalyst film including Ti-containing Fe<SB>2</SB>O<SB>3</SB>with an atom number ratio of Ti to Fe being 0.05 to 0.2 and a second photocatalyst film including TiO<SB>2</SB>, and the hydrogen generation apparatus using it. The method for manufacturing the semiconductor oxide film comprises the process of depositing a Ti-containing Fe<SB>2</SB>O<SB>3</SB>film with an atom number ratio of Ti to Fe being 0.05 to 0.2 by a sputtering method using &alpha;-Fe<SB>2</SB>O<SB>3</SB>and TiO<SB>2</SB>as a target material, depositing a TiO<SB>2</SB>film by the sputtering method using TiO<SB>2</SB>as the target material, and carrying out heat treatment of the formed film at 550 to 600&deg;C. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009050827(A) 申请公布日期 2009.03.12
申请号 JP20070222506 申请日期 2007.08.29
申请人 SHARP CORP 发明人 YOKOZAWA YUJI
分类号 B01J35/02;B01J23/745;B01J37/02;C01B3/04;C01G49/06;C23C14/08;H01L21/363;H01L31/04;H01M8/06 主分类号 B01J35/02
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