| 摘要 |
PROBLEM TO BE SOLVED: To provide a field-effect transistor capable of suppressing the degradation of manufacturing yield and maintaining proper high-frequency characteristics. SOLUTION: At least two drain ohmic contacting portions are disposed crossing an active region. A source ohmic contacting portion is disposed between the drain ohmic contacting portions. A drain connecting portion on an element separation region connects ends of the drain ohmic contacting portions, on the same side to each other. Gate fingers are disposed between the drain ohmic contacting portion and source ohmic contacting portion. A gate-feed wiring on the element separation region connects gate fingers to one another at ends on the opposite side from the side where the drain connection portion is disposed. A gate tip portion connects gate fingers which are adjacent to one another, with the source ohmic contacting portion being interposed therebetween to one another, at ends on the side where the drain connecting portion is disposed. The gate tip connecting portion crosses neither the drain ohmic contacting portions nor the drain connecting portion. COPYRIGHT: (C)2009,JPO&INPIT
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