SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device capable of suppressing increase in the contact resistance, even when a fine contact is formed, and to provide a manufacturing method therefor. SOLUTION: The semiconductor device has a plurality of gate electrodes 12, disposed on a semiconductor substrate 10 at narrow intervals and an interlayer insulating film 20 covering the gate electrodes 12. The interlayer insulating film 20 has a moisture-absorbing insulating film 15 which is charged between mutually adjacent gate electrodes 12 and has a film thickness on the gate electrodes 12 smaller than on a flat surface of the semiconductor substrate 10, and a non-moisture-absorbing insulating film 16 formed on the moisture-absorbing insulating film 15. This structure can suppress increase in the contact resistance due to H2O discharged from the moisture-absorbing insulating film 15, even when a fine contact is formed between gate electrodes 12. COPYRIGHT: (C)2009,JPO&INPIT