| 摘要 |
A semiconductor device provided with: a channel region formed in a surface of a semiconductor substrate in a predetermined depth range, a trench being formed in the surface as penetrating the channel region in a depthwise direction; a gate insulating film formed on an inside wall of the trench, the gate insulating film being in contact with the channel region; and a gate electrode including: a polysilicon layer opposing the channel region with the gate insulating film interposed therebetween, the polysilicon layer being embedded in an internal space of the trench at least in the predetermined depth range; and a low-resistance layer essentially formed from a metal element and disposed in the trench above the polysilicon layer that opposes the channel region.
|
