发明名称 FLASH MEMORY ARRAY SYSTEM INCLUDING A TOP GATE MEMORY CELL
摘要 A memory system includes memory cells arranged in sectors. A decoder corresponding to a sector disables memory cells having a defective top gate. The decoder may include a low voltage or high voltage latch for the disabling. A top gate handling algorithm is included. The memory system may include dynamic top gate coupling. A programming algorithm and waveforms with top gate handling is included.
申请公布号 US2009067239(A1) 申请公布日期 2009.03.12
申请号 US20080267519 申请日期 2008.11.07
申请人 SILICON STORAGE TECHNOLOGY, INC. 发明人 TRAN HIEU VAN;NGUYEN HUNG QUOC;LY ANH;HSUEH SHENG-HSIUNG;NGUYEN SANG THANH;HOANG LOC B.;CHOI STEVE;VU THUAN T.
分类号 G11C16/00;G11C16/06 主分类号 G11C16/00
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