摘要 |
<p>The method involves bringing a thin medium i.e. silicon wafer (2), to be examined, between an X-ray radiation source (1) i.e. X-ray tube, and an imaging system i.e. camera (3), where the medium is used in photovoltaic. Sides of a test sample are irradiated. A determination is made to check whether the test sample includes a mono or polycrystalline structure. A determination is made to check whether the test sample is formed of single material or applied on a substrate, through vaporization of amorphous silicon.</p> |