METAL OXIDE SEMICONDUCTOR MANUFACTURING METHOD AND THIN FILM TRANSISTOR OBTAINED BY THE METHOD

摘要

Provided is a novel metal oxide semiconductor manufacturing method by which fluctuation of off-current or the like is improved, mobility is improved, a TFT element is stabilized, and furthermore, production efficiency is improved and a metal oxide semiconductor is made flexible by performing formation by continuous application, printing and the like on a resin substrate. A thin film transistor manufactured by such manufacturing method is also provided. The metal oxide semiconductor manufacturing method is characterized in forming a thin film including a precursor of a metal oxide semiconductor, on the substrate, then, irradiating the thin film with electromagnetic wave under existence of oxygen to manufacture the metal oxide semiconductor.