发明名称 |
Semiconductor device and method of fabricating metal gate of the same |
摘要 |
Provided is a semiconductor device that comprises a metal gate having a low sheet resistance characteristic and a high diffusion barrier characteristic and a method of fabricating the metal gate of the semiconductor device. The semiconductor device includes a metal gate formed on a gate insulating film, wherein the metal gate is formed of a metal nitride that contains Al or Si and includes upper and lower portions where the content of Al or Si is relatively high and a central portion where the content of Al or Si is relatively low.
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申请公布号 |
US2009065873(A1) |
申请公布日期 |
2009.03.12 |
申请号 |
US20080007431 |
申请日期 |
2008.01.10 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK SUNG-HO;NOH JIN-SEO;JEON JOONG S. |
分类号 |
H01L21/8238;H01L27/092 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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