| 摘要 |
A plasm etch process includes a plasma etch step performed with a photoresist mask on a workpiece using a polymerizing etch process gas that produces in the plasma polymerizing species which accumulate as a protective polymer layer on the surface of said photoresist mask during the etch step, the process including the following steps performed in the same chamber after the etch step and prior to removing the photoresist mask: (a) removing residue of the type including polymer material from chamber surfaces including a ceiling of said chamber, by coupling RF plasma source power into the chamber while coupling substantially no RF plasma bias power into the chamber, and introducing a hydrogen-containing gas into the chamber, until said residue is removed from the chamber surfaces; (b) removing the protective polymer layer from the surface of the photoresist mask, by coupling RF plasma bias power into the chamber while coupling substantially no RF plasma source power into the chamber, and introducing into the chamber a process gas comprising oxygen and carbon monoxide, until the polymer layer is removed from the surface of the photoresist mask.
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