LAMINATE STRUCTURE OF GROUP III NITRIDE SEMICONDUCTOR, MANUFACTURING METHOD THEREOF, SEMICONDUCTOR LIGHT-EMITTING ELEMENT, AND LAMP

摘要

PROBLEM TO BE SOLVED: To obtain a crystal layer as a buffer layer with sufficient uniformity and to obtain a film of sufficient crystallinity at the time of forming a group III nitride semiconductor crystal structure on the crystal layer.

SOLUTION: A laminate structure of the group III nitride semiconductor has a first layer consisting of group III nitride, which is formed by a sputtering method, on a substrate and a has a second layer which is brought into contact with the first layer and consists of a group III nitride material. The first layer is formed inside a chamber of a film forming device and is formed with a condition that ultimate vacuum in the chamber of the film forming device is not more than 1.0×10-3Pa.

COPYRIGHT: (C)2009,JPO&INPIT