| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser device ensuring high power output, high heat resistance and control of kink, and moreover control of distribution of light nearby the end surface of a resonator by controlling radiation characteristic. SOLUTION: The semiconductor laser device includes a couple of resonator surfaces A50, B50 provided opposed with each other, and is also provided with a semiconductor substrate 1 having a surface crossing in the right angle the resonator surfaces and a ridge 10 formed on one surface to couple the resonator surfaces. The ridge 10 is constituted to include a first width part 11 provided between the resonator surfaces to have a first width W11 in the direction along the resonator surface and one surface, a second width part 12 provided respectively in contact with the resonator surfaces to have a second width W12 wider than the first width in the direction explained above, and a third width part 13 provided to couple the first width part and the second width part to have a third width W13 that is continuously provided to become wider toward the second width part side from the first width part side and become almost equal to the first width at the area in contact with the first width part and also become almost equal to the second width at the area in contact with the second width part. COPYRIGHT: (C)2009,JPO&INPIT
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