| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device which has a semiconductor construction called a CSP, wherein the semiconductor device has a fan-out terminal structure and is made thin. <P>SOLUTION: A lower layer insulation film 1 made of epoxy-based resin etc., is formed on a top surface of a base plate 41 made of copper foil. Then the semiconductor construction 2 is mounted on a top surface of the lower layer insulation film 1 with an adhesion layer interposed therebetween. Then an insulation layer 31 made of epoxy-based resin etc., is formed on the top surface of the lower layer insulation film 1 at a periphery of the semiconductor construction 2, and an insulation substrate 32 made of glass baric base epoxy resin etc., is buried in a top surface side of the insulation layer 31. Then the base plate 41 is removed. Therefore, the completed semiconductor device does not include the base plate 41 and the semiconductor device wherein an arrangement area of an electrode for external connection is larger (Fan-out) than the plane size of the semiconductor construction 2 can be made thin. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
