| 摘要 |
A thin film transistor device includes a semiconductor layer. The semiconductor layer includes a compound comprising a chemical structure represented by: wherein each R is independently selected from hydrogen, an optionally substituted hydrocarbon, and a hetero-containing group, each Ar is independently selected from optionally substituted aryl and heteroaryl groups, each M is an optional, conjugated moiety, a represents a number that is at least 1, b represents a number from 0 to 20, and n represents a number that is at least 1.
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