SOLID STATE IMAGING ELEMENT

摘要

Pixels (10) including photo diodes are arranged in a two-dimensional array in a pixel region (2a). Storage units holding signals generated by the respective pixels for the number of continuous imaging frames are arranged in a storage region (3a). The pixel region (2s) and the storage region (3a) are arranged separately from each other on a semiconductor substrate. All the pixels simultaneously execute photo charge accumulation and output signals generated by the photo charge accumulation via independent pixel output lines (14) in parallel. In the storage units connected to one pixel output line, sampling transistors in different storage units are successively turned ON upon one exposure so as to successively hold signals in capacitors of the respective storage units. After continuous imaging is complete, all the pixel signals are successively read out. Since all the gate loads are not driven simultaneously like a CCD, it is possible to suppress power consumption and it is possible to perform a high-speed drive. Moreover, since the storage region is separated from the pixel region, it is possible to prevent signal degradation by an excessive flow-in of the photo charges. This enables a continuous imaging of a higher speed than in the conventional technique and improves the image quality of a captured image.