发明名称 |
Verfahren und Vorrichtung zur Herstellung von Halbleitern mittels Laserstrahlung |
摘要 |
<p>It is an object to achieve continuous crystal growth without optical interference using a compact laser irradiation apparatus. A megahertz laser beam is split and combined to crystallize a semiconductor film. At this point of time, an optical path difference is provided between the split beams to introduce a time delay between split beams and thereby reduce optical interference. The optical path difference is set to have a length equivalent to the pulse width of the megahertz laser beam or more and less than a length equivalent to the pulse repetition interval; thus, optical interference can be suppressed with a very short optical path difference. Therefore, laser beams can be applied continuously and efficiently without energy deterioration.</p> |
申请公布号 |
DE602006004913(D1) |
申请公布日期 |
2009.03.12 |
申请号 |
DE20066004913T |
申请日期 |
2006.04.26 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO. LTD. |
发明人 |
TANAKA, KOICHIRO;OISHI, HIROTADA |
分类号 |
B23K26/067;H01L21/20 |
主分类号 |
B23K26/067 |
代理机构 |
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代理人 |
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地址 |
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