发明名称 |
METHOD FOR MANUFACTURING THIN FILM PIEZOELECTRIC RESONATOR AND THIN FILM PIEZOELECTRIC RESONATOR |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a thin film piezoelectric resonator capable of preventing a lower electrode from being damaged resulting from dry etching during forming a piezoelectric thin film pattern. <P>SOLUTION: After forming a pattern of a lower electrode made of metal on the surface of a substrate, an etching stop layer made of material different from that of the lower electrode is formed on the surface of the pattern of the lower electrode, which is an area including an area that is not covered by a piezoelectric thin film. The etching stop layer is made of material, the etching-proof property of which is large against etchant in plasma so as to be able to protect the lower electrode when the piezoelectric thin film is eliminated by etching. Then, there is no possibility that the lower electrode is etched by plasma when plasmatizing reactive gas for dry etching to form a pattern of the piezoelectric thin film by etching the piezoelectric thin film by the plasma. <P>COPYRIGHT: (C)2009,JPO&INPIT |
申请公布号 |
JP2009055128(A) |
申请公布日期 |
2009.03.12 |
申请号 |
JP20070217504 |
申请日期 |
2007.08.23 |
申请人 |
NIPPON DEMPA KOGYO CO LTD |
发明人 |
KAMIJO ATSUSHI;IKOMA KAZUMASA;INOSE NAOTO |
分类号 |
H03H3/02;H01L41/09;H01L41/18;H01L41/22;H01L41/29;H01L41/332;H01L41/39;H03H9/17 |
主分类号 |
H03H3/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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