| 摘要 |
PROBLEM TO BE SOLVED: To provide an element having a structure which is directly formed on a semiconductor as a schottky electrode made of a metal having hydrogen absorbing property such as Pt, etc. which has high work function to solve the problem that characteristics changes significantly to temperature or surrounding atmosphere. SOLUTION: A silicon nitride (SixNy) thin film is provided between a semiconductor substrate and the schottky electrode. The silicon nitride (SixNy) thin film has a thickness of 0.5 to 10 nm. COPYRIGHT: (C)2009,JPO&INPIT |
