NOVEL METHOD OF MONITORING AND REGULATING TEMPERATURE IN SEMICONDUCTOR PROCESS CHAMBER

摘要

PROBLEM TO BE SOLVED: To provide a nondestructive method for monitoring to regulate a temperature in a chamber. SOLUTION: The method for measuring the temperature includes a step 210 for forming a target layer on a test board at a first temperature with more than one property responsive to the temperature at which the target layer is exposed, a step 230 for exposing the target layer under the atmosphere at the second temperature higher than the first temperature, a step 240 for measuring more than one property of the target layer after exposing it under the atmosphere at the second temperature, and a step 250 for determining the second temperature in accordance with more than one measured property. COPYRIGHT: (C)2009,JPO&INPIT