| 摘要 |
PROBLEM TO BE SOLVED: To not only draw out the quantity of charge Qg of MOSFET in a short time but also shorten the period of conduction and that of non-conduction of the MOSFET in addition to delaying a turn-on phase corresponding to the time for drawing out the Qg, by maintaining a voltage between a gate and source of PchMOSFET for driving a charge multiplication electrode of EM-CCD. SOLUTION: In a switching circuit that carries out direct-current regeneration of a complementary MOSFET gate by a diode by capacitance coupling and driving a gate of the complementary MOSFET through a logic CMOS integrated circuit using the complementary MOSFET, a resistor and Schottky barrier diode are parallel connected and series connected to the capacitance coupling. This results in allowing not only a gate voltage direct-current-regenerative diode of the PchMOSFET to be used as the Schottky barrier diode but also the logic CMOS integrated circuit to be employed as a Schmitt trigger inverter IC whose power supply voltage is 5 V. COPYRIGHT: (C)2009,JPO&INPIT
|
