| 摘要 |
PROBLEM TO BE SOLVED: To form a polycrystalline ferroelectric film on a polycrystalline electrode to set a (104) plane large in charge density in parallel to a principal surface of a semiconductor substrate without giving thermal damage to a transistor on the semiconductor substrate. SOLUTION: The manufacturing method of this ferroelectric device includes: a process S1 of forming a polycrystalline electrode on or above a substrate with an MOS transistor formed thereon; a process S2 of forming an amorphous film formed of bismuth titanate on the polycrystalline electrode by an organic metal chemical vapor deposition method; and a process S3 of converting the amorphous film to a polycrystalline ferroelectric film formed of multiple bismuth titanate crystals of a layered perovskite structure by applying anneal thereto. The process S3 includes a process of raising temperature to the lower limit in a predetermined temperature range at a temperature raising rate without growing a crystal nucleus. COPYRIGHT: (C)2009,JPO&INPIT
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