发明名称 |
IMPLEMENTATION OF TEMPERATURE-DEPENDENT PHASE SWITCH LAYER FOR IMPROVED TEMPERATURE UNIFORMITY DURING ANNEALING |
摘要 |
The present invention provides a method of annealing a semiconductor by applying a temperature-dependant phase switch layer to a semiconductor structure. The temperature-dependant phase switch layer changes phase from amorphous to crystalline at a predetermined temperature. When the semiconductor structure is annealed, electromagnetic radiation passes through the temperature-dependant phase switch layer before reaching the semiconductor structure. When a desired annealing temperature is reached the temperature-dependant phase switch layer substantially blocks the electromagnetic radiation from reaching the semiconductor structure. As a result, the semiconductor is annealed at a consistent temperature across the wafer. The temperature at which the temperature-dependant phase switch layer changes phase can be controlled by an ion implantation process.
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申请公布号 |
US2009068825(A1) |
申请公布日期 |
2009.03.12 |
申请号 |
US20070853156 |
申请日期 |
2007.09.11 |
申请人 |
POON CHYIU HYIA;SEE ALEX;ZHOU MEI SHENG |
发明人 |
POON CHYIU HYIA;SEE ALEX;ZHOU MEI SHENG |
分类号 |
H01L21/22;H01L21/324 |
主分类号 |
H01L21/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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