发明名称 MANUFACTURING METHOD OF PIEZOELECTRIC ELEMENT, MANUFACTURING METHOD OF DIELECTRIC LAYER, AND MANUFACTURING METHOD OF ACTUATOR
摘要 <P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a piezoelectric element which suppresses variations of titanium content rates in respective parts in a dielectric layer, and has the dielectric layer with good characteristics. <P>SOLUTION: The manufacturing method of the piezoelectric element 100 includes a process for forming a lower electrode 20 above a base 10, a process for forming the dielectric layer 30 by performing a set of a first process for forming a precursor layer with a plurality of raw material layers laminated above the lower electrode 20, and a second process for forming a layered part 311 by crystallizing the precursor layer at one time or a plurality of times, and a process for forming an upper electrode 40 above the dielectric layer 30. The dielectric layer 30 is formed of perovskite oxide represented by general formula ABO<SB>3</SB>. The A site contains lead (Pb), the B site contains zirconium (Zr) and titanium (Ti). An average titanium content ratio of the plurality of the raw material layers is smaller than an average titanium content ratio of the lower raw material layer. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009054618(A) 申请公布日期 2009.03.12
申请号 JP20070217012 申请日期 2007.08.23
申请人 SEIKO EPSON CORP 发明人 NOGUCHI MOTOHISA;MIYAZAWA HIROSHI;HIRAI EIKI
分类号 H01L41/09;B41J2/045;B41J2/055;B41J2/135;B41J2/14;B41J2/16;H01L21/316;H01L41/187;H01L41/22;H01L41/317;H01L41/39;H01L41/43 主分类号 H01L41/09
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