| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor element which reduces a current leakage via a clad layer and prevents the diffusion of an injected carrier in between a core layer in a region having a first function and a core layer in a region having a second function. SOLUTION: This semiconductor element includes a first waveguide region 2 having a first function and a second waveguide region 3 having a second function provided adjacent to the first waveguide region 2 which are provided on a semiconductor substrate 1, wherein at least one of the first waveguide region 2 and the second waveguide region 3 is a region exhibiting the function by applying a current; between a first clad layer 7 of first conductive type in the first waveguide region 2 and a second clad layer 13 of first conductive type in the second waveguide region 3, a third clad layer 11 of second conductive type is provided; and between a first core layer 6 in the first waveguide region 2 and a second core layer 12 in the second waveguide region 3, a semiconductor layer 11 having a band gap energy larger than those of the first core layer 6 and the second core layer 12 is provided. COPYRIGHT: (C)2009,JPO&INPIT
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