| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing gallium nitride capable of growing a crystal at a low temperature and a low pressure. SOLUTION: The method of manufacturing gallium nitride comprises growing a crystal of gallium nitride by reacting gallium oxide with lithium nitride in a liquid metal bath. The metal bath is preferably composed of gallium. The crystal growth reaction of gallium nitride is preferably carried out at a reaction temperature not lower than 700°C. Further, the molar ratio of gallium oxide to lithium nitride is preferably not greater than one quarter. COPYRIGHT: (C)2009,JPO&INPIT
|
