| 摘要 |
Provided is a semiconductor memory device having peripheral circuit capacitors. In the semiconductor memory device, a first node is electrically connected to a plurality of lower electrodes of a plurality of capacitors in a peripheral circuit region to connect at least a portion of the capacitors in parallel. A second node is electrically connected to a plurality of upper electrodes of the capacitors in the peripheral circuit region to connect at least a portion of the capacitors in parallel. The first node is formed at substantially the same level as a bit line in a cell array region and is formed of the same material used to form the bit line.
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