| 摘要 |
<p>This invention provides a semiconductor device, which, by virtue of crosslinking between individual single-layer CNTs constituting a single-layer CNT film with a metal, can ensure transparency and comprises an electrode and a wiring formed of a single-layer CNT film having a lower sheet resistance than the prior art technique, and a semiconductor device comprising a CNT film channel which, while maintaining transparency, can simultaneously increase on-current and on/off ratio per unit width, and a process for producing the semiconductor device. The semiconductor device comprises an electrode, a wiring or a channel comprising a plurality of interconnected single-layer CNT films. Adjacent single-layer CNTs in the electrodes, wirings or channels formed of the single-layer CNT films are crosslinked to each other with a metal. The process for producing a semiconductor device comprises the steps of forming a single-layer CNT film, imparting reducing properties to the surface of the single-layer CNT, reducing a metal ion (M+) to a neutral metal atom (M0) by taking advantage of the reducing properties of the single-layer CNT, and growing the reduced metal atom as a nucleus to a metal particle and to crosslink adjacent single-layer CNTs to each other.</p> |
