| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a display device having a reliable threshold-controlled thin-film transistor. SOLUTION: A gate insulating film is formed over a gate electrode, a microcrystalline semiconductor film is formed over the gate insulating film, an impurity element for controlling the threshold is added into the microcrystalline semiconductor film by an ion implantation method, the microcrystalline semiconductor film is irradiated with laser beams so that the crystallinity of the microcrystalline semiconductor film is improved, and then, a buffer layer is formed over the microcrystalline semiconductor film, whereby a channel-etched thin film transistor is formed. Further, the display device including the thin-film transistor is manufactured. COPYRIGHT: (C)2009,JPO&INPIT |
