| 摘要 |
A plasma processing apparatus includes a chamber configured to accommodate a target substrate; a plasma generation mechanism configured to generate plasma inside the chamber; a process gas supply mechanism configured to supply a process gas into the chamber; an exhaust mechanism connected to the chamber to exhaust gas from inside the chamber; a table configured to place the target substrate thereon inside the chamber, the table including a table main body and a heating element disposed in the main body to heat the substrate; a support portion that supports the substrate table; a fixing member that fixes the support portion to the chamber; and an electrode configured to supply a power to the heating element, wherein the heating element and the electrode are made of an SiC-containing material, the electrode is fixed to the fixing member, extends through the support portion, and is connected to the heating element at a distal end, and an electrode sheath member made of a quartz-containing insulative material envelops the electrode except for the distal end, and extends through a portion of the substrate table below the heating element, the support portion, and the fixing member.
|
