| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a light emitting diode, the method having superior heat dissipation property by which many light emitting diodes are not manufactured at a time in a state where they are scattered but manufactured in a state where they are arrayed and can be formed into a chip. <P>SOLUTION: The manufacturing method of the light emitting diode 100 includes the steps of: stacking a compound semiconductor layer 20 comprising an n-type semiconductor layer 21, a light emission layer 22, and a p-typ semiconductor layer 23, a reflective p-type ohmic electrode 30, a seed layer 73, and a plated layer 70 in order on a substrate; sticking a temporarily stuck substrate on the plated layer 70; exposing a light extraction surface 20a; forming an n-type ohmic electrode 10; removing the temporarily stuck substrate; and irradiating the plated layer 70 with laser beam 92 to form a re-fusion portion 59 and then dividing the plated layer 70 along the re-fusion portion 59. <P>COPYRIGHT: (C)2009,JPO&INPIT |
