发明名称 NONVOLATILE SEMICONDUCTOR MEMORY AND REWRITE CONTROL METHOD THEREOF
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory whose life can be extended by averaging use state for each memory cell, and to provide a rewrite control method thereof. <P>SOLUTION: In the nonvolatile semiconductor memory having a plurality of memory blocks and electrically rewriting data collectively for each memory block, the respective use states of the plurality of the memory blocks are managed, and in data rewrite, the data is written in the memory block as it is or in an inverted manner based on the use state of the memory block whose data is to be rewritten. <P>COPYRIGHT: (C)2009,JPO&INPIT</p>
申请公布号 JP2009054236(A) 申请公布日期 2009.03.12
申请号 JP20070220032 申请日期 2007.08.27
申请人 FUNAI ELECTRIC CO LTD 发明人 IMAMURA KENSUKE
分类号 G11C16/02;G06F12/00;G06F12/16 主分类号 G11C16/02
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