| 摘要 |
PROBLEM TO BE SOLVED: To accurately control carrier concentration of a selective growth layer, in a selective growth method of a group III nitride semiconductor. SOLUTION: First, an n<SP>-</SP>-GaN layer 11 and a p-GaN layer 12 are stacked on an n-GaN substrate 10, and a surface of the p-GaN layer 12 is exposed to chlorine-based plasma along with a substrate with Ni deposited thereon to form a plasma-damaged layer 13 (fig. 1a). Next, an etching mask 14 is formed, a part of the p-GaN layer 12 is subjected to dry etching (fig. 1b), and the etching mask 14 is removed after executing SC1, SC2 cleaning (fig. 1c). Then, the n<SP>-</SP>-GaN layer 17 is selectively grown by using the plasma-damaged layer 13 as a selective growth mask (fig. 1d). Since the plasma-damaged layer 13 is used as the selective growth mask, Si is prevented from being doped during the growth of the n<SP>-</SP>-GaN layer 17, and the carrier concentration of the n<SP>-</SP>-GaN layer 17 can be correctly controlled. COPYRIGHT: (C)2009,JPO&INPIT
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