| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing a leakage current from being generated among wirings. SOLUTION: An interlayer insulating film 1 is formed of SiO<SB>2</SB>. The interlayer insulating film 1 has grooves 2a and 2b dug from its top surface. In these grooves 2a and 2b, wirings 4a and 4b formed of CuMn are buried. On the interlayer insulating film 1 and wirings 4a and 4b, a film 5 for barrier formation formed of SiO<SB>2</SB>is laminated. On the film 5 for barrier formation, a passivation film 6 is laminated. Furthermore, barrier films 3a and 3b formed of MnSiO are interposed in between the wirings 4a and 4b and interlayer insulating film 1, and the film 5 for barrier formation. The entire surfaces of wirings 4a and 4b are covered with the barrier films 3a and 3b. COPYRIGHT: (C)2009,JPO&INPIT
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