发明名称 Methods for supplying power supply voltages in semiconductor memory devices and semiconductor memory devices using the same
摘要 In a method for supplying power supply voltages in a semiconductor memory device a first source voltage is applied to a memory cell of a memory cell array as a cell array internal voltage for operating a sense amplifier coupled to the memory cell. A second source voltage is applied as a word line drive voltage of the memory cell array. The second source voltage has a voltage level higher than a voltage level of the first source voltage. The second source voltage is also applied as a drive voltage of an input/output line driver to drive write data into an input/output line in a write operating mode.
申请公布号 US2009067217(A1) 申请公布日期 2009.03.12
申请号 US20080071348 申请日期 2008.02.20
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SUNWOO JUNG;LEE YUN-SANG
分类号 G11C11/24;G11C5/14;G11C8/08 主分类号 G11C11/24
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