发明名称 |
Methods for supplying power supply voltages in semiconductor memory devices and semiconductor memory devices using the same |
摘要 |
In a method for supplying power supply voltages in a semiconductor memory device a first source voltage is applied to a memory cell of a memory cell array as a cell array internal voltage for operating a sense amplifier coupled to the memory cell. A second source voltage is applied as a word line drive voltage of the memory cell array. The second source voltage has a voltage level higher than a voltage level of the first source voltage. The second source voltage is also applied as a drive voltage of an input/output line driver to drive write data into an input/output line in a write operating mode.
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申请公布号 |
US2009067217(A1) |
申请公布日期 |
2009.03.12 |
申请号 |
US20080071348 |
申请日期 |
2008.02.20 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SUNWOO JUNG;LEE YUN-SANG |
分类号 |
G11C11/24;G11C5/14;G11C8/08 |
主分类号 |
G11C11/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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