| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THEREOF |
| 摘要 |
<p>A semiconductor device that includes a gate electrode (16) formed above a semiconductor substrate (10), a gate insulating film (12) formed on the semiconductor substrate (10) below the center of the gate electrode (16), a first insulating film (14) which is applied from an area on the gate insulating film (12) to areas below both ends of the gate electrode (16) and which is formed of a material different from that of the gate insulating film (12), a tunnel insulating film (21) formed on the semiconductor substrate (10) at both sides of the gate insulating film (12), and a charge storage layer (26) interposed between the tunnel insulating film (21) and the first insulating film (14), and a method for manufacturing the semiconductor device are provided.</p> |
| 申请公布号 |
WO2009032678(A1) |
申请公布日期 |
2009.03.12 |
| 申请号 |
WO2008US74417 |
申请日期 |
2008.08.27 |
| 申请人 |
SPANSION LLC;MURUYAMA, TAKAYUKI;INOUE, FUMIHIKO;SONE, KATSUHIDE |
发明人 |
MURUYAMA, TAKAYUKI;INOUE, FUMIHIKO;SONE, KATSUHIDE |
| 分类号 |
H01L21/28;H01L21/8247;H01L29/423;H01L29/792 |
主分类号 |
H01L21/28 |
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