| 摘要 |
<P>PROBLEM TO BE SOLVED: To increase a light taking-out efficiency, in a light emitting device using a GaN-based semiconductor. <P>SOLUTION: A manufacturing method of the light emitting device has a step for forming an irregular structure having a nano-size by a nano-imprint-process and RIE on the surface of a sapphire substrate 10, and has a step for forming thereon successively a GaN layer 14, an n-type GaN layer 16, an active layer 18, and a p-type GaN layer 20. Hereupon, the irregular structure suppresses the reflection of the light emitted from the active layer 18. SiO<SB>2</SB>or a metal may be also deposited on the interface between the sapphire substrate 10 and the GaN layer 14. An irregular structure having a nano-size may be also formed on the outer surface of the p-type GaN layer 20. <P>COPYRIGHT: (C)2009,JPO&INPIT |
