| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To obtain a method for forming a CCP layer reducing the oxygen pollution of a copper filament and a CCP-CPP element and a manufacturing method for the CCP-CPP element. <P>SOLUTION: A mixing-material layer mixing copper with a nitriding material such as Al, Mg, AlMg or the like is formed on a copper layer 11 formed on a substrate. A nitriding treatment is conducted to the mixing-material layer while the copper layer 11 is kept at 150°C or higher and the copper layer 11 is not changed into copper nitride. Accordingly, a nitriding material is nitrided and a nitride region 13 as an insulating layer is formed while a plurality of conductive paths (the copper filaments 12) dividing and bonding copper so as to be surrounded by the nitride region 13 are formed. The copper filament 12 is penetrated to the nitride region 13 from the copper layer 11 in the film-thickness direction and reaches on the top face of the nitride region 13. Consequently, the CCP layer 20 containing the nitride region 13 and the copper filament 12 is formed. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
