| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and a device for growing a semiconductor crystal such as group III-V, II-VI single crystal by involving a rigid support of a sealed ampule, carbon doping and resistivity control and heat gradient control. SOLUTION: A support cylinder 2050 supports an integrally sealed ampule 4000 and a crucible device 3000, and on the other hand, a low-density insulating material 2060 of the inside of the support cylinder 2050 prevents convection and conductive heat transfer. A radiant heat entering and going out of a seed well 4030 and a transition region 3020 of the crystal growing crucible 3000 is transferred by a radiation channel 2070 penetrating the low-density material 2060. The central part of the growing crystal is cooled by a hollow core 2030 in the insulating material 2060 located directly under the seed well 4030, and a uniform and horizontal growth of a crystal ingot and the interface of a flat crystal-melt zone are obtained, therefore, a wafer provided with a uniform electrical characteristic is obtained. COPYRIGHT: (C)2009,JPO&INPIT |
