发明名称 TEMPERATURE COMPENSATION BIAS CIRCUIT, HIGH-FREQUENCY AMPLIFIER, AND HIGH-FREQUENCY ATTENUATOR
摘要 PROBLEM TO BE SOLVED: To provide a temperature compensation bias circuit which can be operated at a negative voltage and can obtain such a characteristic that an output voltage is greatly changed with a change in temperature. SOLUTION: The circuit includes: a transistor 4 which has its drain terminal connected to a plus-side voltage application terminal 3 and is applied with a source-drain voltage Vgs in a voltage range near a threshold voltage Vth which shows a trend that the drain current increases with an increase in temperature; a diode 5 with its one end connected to a source terminal of the transistor 4 and the other end connected to one end of a resistor 6; a resistor 7 which has its one end connected to the other end of the resistor 6 and the other end connected to a minus-side voltage application terminal 1 and has a gate terminal of the transistor 4 connected to a connecting point of the resistor 6; and an output voltage terminal 2 which is connected to a connecting point between the diode 5 and the resistor 6 and from which output voltage is extracted. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009055438(A) 申请公布日期 2009.03.12
申请号 JP20070221346 申请日期 2007.08.28
申请人 MITSUBISHI ELECTRIC CORP 发明人 MORI KAZUTOMI;OGOMI TOMOKAZU;OTSUKA HIROSHI;NAKAYAMA MASATOSHI
分类号 H03F1/30;H03F3/193;H03H11/24 主分类号 H03F1/30
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