METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To propose a method of manufacturing a semiconductor device with high yield which includes a semiconductor element having a film with reduced mixing of impurity. SOLUTION: In the manufacturing method of the semiconductor device that forms an insulating film using a plasma CVD device in contact with a semiconductor layer provided on a substrate having an insulating surface, after an inner wall of a reaction chamber of a plasma CVD device is coated with a film not including an impurity of the insulated film, the substrate is inserted into the reaction chamber to form the insulating film on the substrate. COPYRIGHT: (C)2009,JPO&INPIT