| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which protects a memory device in the range of positive and negative low-voltage from charge-up during a diffusion process in an FEOL process, and can apply high voltage of positive and negative polarity which is required for the drive of the memory device, to the memory device, after manufacturing processes are completed. SOLUTION: The semiconductor device is provided with: a protected element which is formed in a semiconductor substrate 11; a first protective transistor 41 which is formed in a second conductivity type well 14; and a second protective transistor 42 which is formed in a first conductivity-type well 13. A fourth source-drain diffusion layer 22B of the second protective transistor 42 is in contact with a second diffusion layer 27. A third source-drain diffusion layer 22A is in contact with the second source-drain diffusion layer 21B of the first protective transistor 41 in the second conductivity type well 14. The source-drain diffusion layer 21A of the first protective transistor 41 is in contact with a first diffusion layer 26 in contact with the protected element electrode 32. COPYRIGHT: (C)2009,JPO&INPIT
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