| 摘要 |
PROBLEM TO BE SOLVED: To provide a spin transistor capable of preventing drop of the amount of carriers injected in a drain and drop of carrier injection variation by magnetization reversal. SOLUTION: This spin transistor 1 is provided with: a source 20 formed of a ferromagnetic material; the drain 30 formed of a ferromagnetic material; an SOI substrate 1A forming a Schottky junction with the source 20 and the drain 30; a main gate electrode 40 arranged on the back surface of the SOI substrate 1A, and controlling the potential of an SOI layer 10 of the SOI substrate 1A; an auxiliary gate electrode 50 controlling the potential of a semiconductor layer in the vicinity of the drain; and a channel layer 66. COPYRIGHT: (C)2009,JPO&INPIT
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