| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that short channel effect occurs when impurity concentration of a channel region is low if a channel is made short, that mobility of a carrier drops because of Coulomb scattering when impurity concentration of the channel region is low and that suppression of short channel effect and high mobility are incompatible in a silicon carbide semiconductor device having the channel region in which impurity is diffused and which is formed in terms of self-matching. SOLUTION: The channel region having the region of high impurity concentration and the region of low impurity concentration is formed in terms of self-matching by ion implantation through an implantation mask of two kinds of second conductivity impurities different in diffusion coefficients, extension of the implantation mask, ion implantation of the first conductivity impurity and diffusion of the second conductivity impurity with the large diffusion coefficient owing to activation annealing. COPYRIGHT: (C)2009,JPO&INPIT
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