| 摘要 |
Provides is a compound semiconductor substrate about which the thickness of its nitride semiconductor single crystal layer can be made large while the generation of cracks, crystal defects or the like is restrained in the nitride semiconductor single crystal layer. The substrate has a first intermediate layer 110 formed on a Si single crystal substrate 100 having a crystal plane orientation of {111}. In the layer 110, a first metal compound layer 110a made of any one of TiC, TiN, VC and VN, and a second metal compound layer 110b made of any one of compounds which are different from the compound of the first metal compound layer out of TiC, TiN, VC and VN are laminated in this order alternately each other over the Si single crystal.
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