发明名称 |
A TRANSISTOR AND A METHOD OF MANUFACTURING THE SAME |
摘要 |
<p>A method of manufacturing a transistor (300), the method comprising forming a gate (101) on a substrate (102), forming a spacer (201) on lateral side walls of the gate (101) and on an adjacent portion (202) of the substrate (102), modifying material of the spacer (201) so that the modified spacer (301) covers only a lower portion (303) of the lateral side walls of the gate (101), and providing source/drain regions (301) in the modified spacer (301).</p> |
申请公布号 |
WO2009031085(A1) |
申请公布日期 |
2009.03.12 |
申请号 |
WO2008IB53496 |
申请日期 |
2008.08.29 |
申请人 |
NXP B.V.;MEUNIER-BEILLARD, PHILIPPE;HERINGA, ANCO;DONKERS, JOHANNES |
发明人 |
MEUNIER-BEILLARD, PHILIPPE;HERINGA, ANCO;DONKERS, JOHANNES |
分类号 |
H01L21/8238;H01L21/336;H01L29/417;H01L29/78 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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