发明名称 THIN-FILM PIEZOELECTRIC TRANSFORMER, AND MANUFACTURING METHOD THEREOF
摘要 <P>PROBLEM TO BE SOLVED: To solve a problem wherein characteristics are degraded because a supporting and sealing structure is complicated, and it is redundant in the past by arranging a thin-film piezoelectric vibrator on a silicon substrate of a diaphragm shape, and collectively sealing them. <P>SOLUTION: In a silicon substrate 12, the upper surface and the back surface at its center part are cut as shown in the lower cross-section view of Fig.1, and a piezoelectric vibrator 1 is arranged in this part. As shown in the top view, the piezoelectric vibrator 1 is supported by a thick silicon peripheral part 3 arranged on an outer peripheral part including the right and left of the figure through two beams 2 formed by removing silicon by a known method such as etching. The supported parts are equivalent to node parts. The film structure of the piezoelectric vibrator 1 has an Al electrode, a PZT thin film, a Pt base electrode, a Ti base layer and a SiO<SB>2</SB>thin film in this order from the upper side in the thickness direction. Since the piezoelectric vibrator 1 is supported by the beams 2 integrated with the silicon peripheral part 3 by the above structure, a mechanical connection part is not present, and stable connection can be provided. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009054865(A) 申请公布日期 2009.03.12
申请号 JP20070221487 申请日期 2007.08.28
申请人 SHARP CORP;UNIV NIHON 发明人 IBATA MASAKAZU;UCHIKOBA FUMIO
分类号 H01L41/107;H01L41/187;H01L41/22;H01L41/23;H01L41/332 主分类号 H01L41/107
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